Navitas partners with GlobalFoundries for U.S.-made Gen 5 GaNFast chip production

• Navitas Semiconductor partnered with GlobalFoundries to manufacture 5th-generation GaNFast power devices in the U.S. for AI infrastructure.
• First shipments from GF’s 200mm GaN-on-silicon line in Burlington, Vermont, are set to start in September.
• Collaboration builds on a long-term strategic partnership announced in November 2025 to expand U.S. GaN innovation and domestic supply.
• Initial output targets 650V GaN FETs, positioning the partners to supply performance computing, industrial electrification, and national security demand.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202609010805PRIMZONEFULLFEED9819322) on September 01, 2026, and is solely responsible for the information contained therein.