Magnachip licenses Navitas GeneSiC technology in high-voltage silicon carbide partnership

• MagnaChip entered a strategic partnership with Navitas to accelerate high-voltage, ultra-high-voltage silicon carbide power semiconductor adoption.
• Deal licenses Navitas’ GeneSiC Trench-Assisted Planar technology, spanning 1,200 V, 2,300 V, 3,300 V, higher-voltage device platforms.
• Agreement includes access to Navitas’ silicon carbide supply chain, materials ecosystem to speed market entry.
• Technology slated for porting, qualification, internalization at MagnaChip’s South Korea fab to support local high-power end markets.
• Companies flagged broader collaboration beyond silicon carbide, with additional areas expected to be announced later.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. MagnaChip Semiconductor Corporation published the original content used to generate this news brief on July 23, 2026, and is solely responsible for the information contained therein.