In the early morning of July 17, Beijing time, the Zhou Peng-Liu Chunsen research team from the School of Integrated Circuits and Microelectronics Innovation of the National Key Laboratory of Integrated Chips and Systems of Fudan University published significant results in “Science”. The “quantum flash memory” technology they invented successfully constructed a coplanar drain-channel-source “return to one” structure. For the first time, the non-volatile storage behavior of a single electron was clearly observed in a room temperature environment. This not only completely broke the traditional perception that “single electronic storage” cannot be achieved, pioneered a new theoretical system of single-electron quantum storage, and laid the foundation for a key theoretical revolution in single-electron quantum storage. Foundations . The study raised the information density of charge storage to the theoretical limit, achieved “one electron, one bit”, and also provided a new technical foundation for high-density memory development for artificial general intelligence requirements. At present, the team has systematically opened up the entire chain from underlying materials and device innovation to high-end chip integration and application: “Breaking Dawn” to achieve breakthroughs in access speed, “returning to one” to solve the density limit, and “Changying” has completed prototype chip verification compatible with existing CMOS silicon processes.

In the early morning of July 17, Beijing time, the Zhou Peng-Liu Chunsen research team from the School of Integrated Circuits and Microelectronics Innovation of the National Key Laboratory of Integrated Chips and Systems of Fudan University published significant results in “Science”. The “quantum flash memory” technology they invented successfully constructed a coplanar drain-channel-source “return to one” structure. For the first time, the non-volatile storage behavior of a single electron was clearly observed in a room temperature environment. This not only completely broke the traditional perception that “single electronic storage” cannot be achieved, pioneered a new theoretical system of single-electron quantum storage, and laid the foundation for a key theoretical revolution in single-electron quantum storage. Foundations . The study raised the information density of charge storage to the theoretical limit, achieved “one electron, one bit”, and also provided a new technical foundation for high-density memory development for artificial general intelligence requirements. At present, the team has systematically opened up the entire chain from underlying materials and device innovation to high-end chip integration and application: “Breaking Dawn” to achieve breakthroughs in access speed, “returning to one” to solve the density limit, and “Changying” has completed prototype chip verification compatible with existing CMOS silicon processes.