At the Hengkun New Materials Performance Conference for the first half of 2026 held today, when introducing the TEOS production capacity utilization rate of the precursor material, the company said that the current capacity utilization rate of the company TEOS is over 50%. It once proposed “spin-coated dielectric materials” as the third largest product matrix in its semi-annual report. In terms of recent developments, it stated, “Spin-coated dielectric materials are the core materials required for manufacturing DRAM, 14nm and below advanced logic chips, and high-stack 3D NAND memory chips, and are currently in the R&D and industrialization preparation stages.”

At the Hengkun New Materials Performance Conference for the first half of 2026 held today, when introducing the TEOS production capacity utilization rate of the precursor material, the company said that the current capacity utilization rate of the company TEOS is over 50%. It once proposed “spin-coated dielectric materials” as the third largest product matrix in its semi-annual report. In terms of recent developments, it stated, “Spin-coated dielectric materials are the core materials required for manufacturing DRAM, 14nm and below advanced logic chips, and high-stack 3D NAND memory chips, and are currently in the R&D and industrialization preparation stages.”