According to information from Fujia Gallium, recently, Fujia Gallium successfully grew 6-inch gallium oxide single crystal ingots with a thickness of over 70 mm using the autonomous vertical Bridgman method. The crystallization quality is excellent; at the same time, after testing by the China Institute of Metrology, the electrical performance can meet the requirements of the silicon carbide industry for substrates. Ingot thickness is a key indicator for measuring the maturity and degree of industrialization of single crystal growth technology. Thicker ingots mean that a single crystal can cut more substrates, directly reducing the cost of a single piece.

According to information from Fujia Gallium, recently, Fujia Gallium successfully grew 6-inch gallium oxide single crystal ingots with a thickness of over 70 mm using the autonomous vertical Bridgman method. The crystallization quality is excellent; at the same time, after testing by the China Institute of Metrology, the electrical performance can meet the requirements of the silicon carbide industry for substrates. Ingot thickness is a key indicator for measuring the maturity and degree of industrialization of single crystal growth technology. Thicker ingots mean that a single crystal can cut more substrates, directly reducing the cost of a single piece.